Word line selection circuit and row decoder

ABSTRACT

A first exemplary aspect of the present invention is a word line selection circuit where address decode signals composed of a power supply voltage and a first voltage lower than a ground voltage are input, and that a word line selection signal composed of the first voltage and a second voltage higher than the power supply voltage is output not via a level shift circuit according to the address decode signals.

CROSS-REFERENCE TO RELATED PATENT APPLICATIONS

Japan Priority Application 2009-127676, filed May 27, 2009 including thespecification, drawings, claims and abstract, is incorporated herein byreference in its entirety. Japan Priority Application 2010-027902, filedFeb. 10, 2010 including the specification, drawings, claims andabstract, is incorporated herein by reference in its entirety. Thisapplication is a Continuation of U.S. application Ser. No. 12/773,404,filed May 4, 2010, incorporated herein by reference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a word line selection circuit thatselects a word line of a semiconductor memory device, and to a rowdecoder.

2. Description of Related Art

Regarding a word line selection circuit of a semiconductor memorydevice, circuits are known such as those disclosed in Japanese PatentNo. 3838892 and Japanese Unexamined Patent Application Publication No.H07-254275. A schematic configuration and an operation of the relatedsemiconductor memory device will be explained with reference to FIGS. 12and 13. In FIG. 12, address signals that select word lines are appliedto terminals 21 to 23. An address buffer 26 buffers address signals A0to A10 which are applied at different times to the terminals 21 to 23,and outputs the buffered address signals. A pre-decoder 30 is connectedto the address buffer 26, decodes address data A0 and A1 to output themas a 4-bit signal SSD, decodes address data A2 to A9 in two bit groupsin similar fashion to A0 and A1, and furthermore, outputs a signal ASgenerated by amplifying address data A10 and an inverted signal/ASthereof. Subsequently, a main decoder 60 is connected to the pre-decoder30, and receives the outputs generated by decoding the address data A2to A9. The main decoder 60 further decodes the outputs from thepre-decoder 30, and supplies them to first word decoders 70 and 80. Thefirst word decoders select a word line MWL of a memory cell array basedon the outputs of the main decoder 60, and then activate it.

Here, the first word decoders 70 and 80 are composed of sub-decoders 71to 84. FIG. 13 shows a configuration of the sub-decoder. As shown inFIG. 13, the sub-decoder is provided with 64 three-input NAND gates NG0to NG63 and drivers DV0 to DV63 that perform level conversion andamplification of outputs of the respective NAND gates NG0 to NG63.

Each of the drivers DV0 to DV63, as shown in FIG. 13, is composed of alevel conversion circuit 131, P channel FET 132, and N channel FET 133.An output of the level conversion circuit 131 is applied to each gate ofthe FETs 132 and 133. A boosted boost voltage Vbt is supplied to thelevel conversion circuit B1 and to a source of the FET 132. Drains ofthe FETs 132 and 133 are connected to each other, and a source of theFET 133 is grounded. According to such a configuration, the drivercircuits DV0 to DV63 output the boosted voltage Vbt when the outputs ofthe NAND gates NG0 to NG63 are “0”, while they output a ground potentialwhen they are “1.”

However, in an inverter circuit in which a high voltage is applied tothe source of the P channel FET as shown in FIG. 13, as described inJapanese Unexamined Patent Application Publication No. H07-254275(paragraph 0004), a control signal input into a common gate of aninverting buffer needs to be a control signal of VPP (the H level of thecontrol signal is VPP) (Note that a boosted VPP described herein issynonymous with the aforementioned boost voltage Vbt.).

The reason is that in a case where the PMOSFET 132 is controlled by acontrol signal of VCC (the H level of the control signal is the VCC),when the H level (VCC) is input into the gate, there occurs adisadvantage that the PMOSFET 132 is not completely turned off since thesource voltage is the VPP. Hence, a signal that controls the gate of thePMOSFET needs to be the control signal of the VPP, but since the outputsof the decoder are control signals of the VCC, it is necessary toconvert a signal level from the VCC into the VPP. For this reason, it isnecessary to provide a level conversion circuit between a row decoderand the PMOSFET.

However, since a level conversion circuit should be provided for eachword line in the configurations shown in FIGS. 12 and 13, a number oflevel conversion circuits are needed. If the level conversion circuitsare provided in addition to a decoder logic as described above, thenumber of transistors substantially increases, thus leading to theincrease in an area of the word line selection circuit. Further, inorder to provide the level conversion circuit for every word line, thelevel conversion circuits must be arranged by a cell pitch of memorycells in view of a chip layout. In addition, the number of circuitstages increases along with that of the level conversion circuitsprovided between the decoder logic and the inverting butler, thuspreventing the speed-up of the circuit.

Here, if the level conversion circuits are arranged at a preceding stageto the row decoder, and the decoded signals themselves are made intoboosted signals, the number of the level conversion circuits can bereduced. However, the larger becomes areas of the circuits driven bysignals with large amplitude, the more power consumption increases.

It is to be noted that Japanese Unexamined Patent ApplicationPublication No. H07-254275 discloses a configuration that amongprecharge signals and groups of address signals that control a rowdecoder, a level of only the precharge signals is converted to VPP andthen they are input into the row decoder (FIGS. 1 and 2, and paragraph0039 of Japanese Unexamined Patent Application Publication No.H07-254275). This configuration is shown in FIG. 14. Namely, a PMOSFET14, whose drain is connected to a word line WL and whose source is to aboosted potential VPP, is provided at a row decoder 13 of a word lineselection circuit 16. Only a precharge signal PRCH′ that controls a gateof this PMOSFET 14 is then made into a boosted signal. Meanwhile, thegroups of the address signals applied to gates of other FETs thatconstitute a decode logic (NAND gate) 15 of the row decoder 13 are heldas VCC.

In the aforementioned configuration, level conversion is performed onlyto a control signal PRCH for precharge supplied to the gate of thePMOSFET 14 among the signals that control the row decoder 13, and thenthe PRCH is made into the control signal PRCH′ of the VPP. This isbecause the control signal that controls an NMOSFET necessarily need notsupply the control signal of the VPP although the control signal thatcontrols the PMOSFET 14 certainly needs to be the control signal of theVPP. Namely, this is because if trying to control the PMOSFET 14 withthe control signal of the VCC, the transistor is not completely turnedoff when the control signal is at the H level (VCC level). On the otherhand, controlling the NMOSFET with the control signal of the VCC, thetransistor is completely turned off when the control signal is at an Llevel (VSS level), so that there is no disadvantage in a circuitoperation. Note that if the control signal of the NMOSFET is the controlsignal of the VPP, there is no problem in the circuit operation.According to this configuration, it is not necessary to provide thelevel conversion circuit for every row decoder 13, thus enabling toreduce the number of the level conversion circuits.

SUMMARY OF THE INVENTION

However, the present inventors have found a problem that since a levelconversion circuit that converts the level of the control signals isseparately needed in addition to a decoder circuit even according to theconfiguration of the above-described Japanese Unexamined PatentApplication Publication No. H07-254275, the number of circuit stagesincreases. In addition, since the level conversion circuit is arrangedat the preceding stage to the row decoder, a wire length and a parasiticcapacitance increase. Further, necessity arises for securing a drivingcapability of the level conversion circuit in order to drive theincreasing parasitic capacitance, and thus, scale of the levelconversion circuit becomes large. Still further, since a prechargesignal needs to be input regardless of selection/non-selection of a wordline when accessing a memory, a consumption current becomes very largewhen the precharge signal is made into the control signal PRCH′ of theVPP. Meanwhile, when trying to suppress the increasing consumptioncurrent, the control signal PRCH′ of the VPP cannot be enlargedsufficiently, thus not being suitable for high-speed drive. Hence, thereare still a lot of problems in achieving high integration, high speed,and low power consumption of a semiconductor memory device.

A first exemplary aspect of the present invention is a word lineselection circuit where

-   -   address decode signals composed of a power supply voltage and a        first voltage lower than a ground voltage are input, and    -   a word line selection signal composed of the first voltage and a        second voltage higher than the power supply voltage is output        not via a level shift circuit according to the address decode        signals.

A second exemplary aspect of a word line selection circuit of thepresent invention including:

-   -   a first stage having a variable resistance circuit composed of        one transistor controlled by an address decode signal, said        address decode signal being configured to have a first voltage        swing; and    -   a second stage coupled to said first stage, and outputting an        output signal to a word line, said output signal being        configured to have a second voltage swing larger than said first        voltage swing.

According to this configuration, it becomes unnecessary to provide alevel shift circuit for every word line that performs level shift of thecontrol signals.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other exemplary aspects, advantages and features will bemore apparent from the following description of certain exemplaryembodiments taken in conjunction with the accompanying drawings, inwhich:

FIG. 1 shows a word line selection circuit in accordance with a firstembodiment of the present invention;

FIG. 2 illustrates an operation of the word line selection circuit whenselecting a word line WL that has not been selected;

FIG. 3 illustrates an operation of the word line selection circuit whennot selecting the word line WL that has been selected;

FIG. 4 shows a configuration of a word line selection circuit of arelated art for comparative illustration;

FIG. 5 shows a modified embodiment 1 of the present invention;

FIG. 6 shows a modified embodiment 2 of the present invention;

FIG. 7 shows a configuration of a second embodiment of the presentinvention;

FIG. 8 shows a modified embodiment 3 of the present invention;

FIG. 9 shows the modified embodiment 3 of the present invention;

FIG. 10 shows a configuration of a third embodiment of the presentinvention;

FIG. 11 shows a modified embodiment 4 of the present invention;

FIG. 12 shows a configuration of a word line selection circuit of arelated art;

FIG. 13 shows a configuration of a word line selection circuit of arelated art; and

FIG. 14 shows a configuration of a word line selection circuit of arelated art.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the present invention will be shown indrawings and will be explained with reference to reference charactersand numerals given to each component in the drawings.

First Embodiment

FIG. 1 shows a word line selection circuit 100 in accordance with afirst embodiment of the present invention. In FIG. 1, reference numeral200 is a final stage row decoder and reference numeral 300 is a wordline driving driver (inverter circuit). Address signals X1, X2, and X3decoded by a preceding stage row decoder 90 are input into the finalstage row decoder 200. The preceding stage row decoder 90 is a circuitdriven by a non-boosted power supply potential VDD, and the addresssignals X1, X2, and X3 output by the decoder are also control signals ofVDD. It is to be noted that a low potential side of the row decoder 90will be explained as a VICK boosted to be more negative than a groundpotential, but a low potential side power source may be a ground powersource GND.

The final stage row decoder 200 has achieved a circuit that combines athree-input decoder logic and boost level conversion. The final stagerow decoder 200 is composed of three series-connected semiconductortransistors. Namely, it is provided with a PMOS transistor PM1 whosesource is connected to a boosted power supply VPP, an NMOS transistorNM1 whose drain is connected to a drain of the PMOS transistor PM1, andan NMOS transistor NM2 whose drain is connected to a source of the NMOStransistor NM1. The power supply VPP connected to the source of the PMOStransistor PM1 is a boosted potential, and is also a potential generatedby a predetermined VPP generating circuit (not shown). The gates of thePMOS transistor PM1 and the NMOS transistor NM1 are connected in common.Assume that this common gate is a first input node n1. In addition,assume that the gate of the NMOS transistor NM2 is a second input noden2, and that the source thereof is a third input node n3. Further,assume that a connection point of the drains of the PMOS transistor PM1and the NMOS transistor NM1 is a first output node no1.

Subsequently, the final stage row decoder 200 decodes address signalsinput into the first input node n1, the second input node n2, and thethird input node n3, and then controls the word line driving driver 300.Here, the address signal X1 is input into the first input node n1, theaddress signal X2 into the second input node n2, and the address signalX3 into the third input node n3.

The word line driving driver 300 is the inverter circuit, and isprovided with a PMOS transistor PM2 and an NMOS transistor NM3series-connected between a positive power supply VPP and a negativepower supply VKK. Gates of the PMOS transistor PM2 and the NMOStransistor NM3 are connected to each other to be a common gate, and thefirst output node no1 is connected thereto. Assume that a connectionpoint of drains of the PMOS transistor PM2 and the NMOS transistor NM3is a second output node no2. This second output node no2 is connected toa word line WL, at which memory cells 410 that constitute a memory cellarray 400 is provided.

Operations of the first embodiment provided with the above-describedconfiguration will be explained. First, an operation will be explainedwhen selecting the word line WL that has not been selected.

A timing chart at this time is shown in FIG. 2. The voltage of theaddress signals X1, X2, and X3 can swing between VDD and VKK. When theX1 and the X2 is at a low level (VKK) and the X3 at a high level (VDD),a word line has not been activated. Since the address signal X1 is atthe low level at this time, the PMOS transistor PM1 is turned onstrongly. Meanwhile, the NMOS transistor NM1 and the NMOS transistor NM2are turned off. Hence, a potential of the first output node no1 becomesthe high level (VPP). Since a high level voltage is then applied to thecommon gate of the word line driving driver 300, an output of the wordline driving driver 300 is at the low level (VKK), and thus the wordline WL is not activated (not selected).

When the address signals X1 and X2 become the high level (VDD) and theX3 changes to the low level (VKK) from the above-described state, thePMOS transistor PM1 is turned off, and both the NMOS transistor NM1 andNM2 are turned on. Here, a gate voltage of the PMOS transistor PM1 is aVPP-VDD, which is slightly exceeds a threshold value Vtp. Hence, thePMOS transistor PM1 is not completely turned off, but continues to beweakly on, and thus, it becomes a state of high resistance. Since thepotential of the first output node no1 is decided by a relation betweenthe VPP through a high resistor (PMOS transistor PM1) and the VKKthrough the NMOS transistor NM1 in an ON state, it becomes a sufficientlow level. Since the first output node no1 changes to the low level asdescribed above, the output of the word line driving driver 300 becomesthe high level (VPP), and the word line is activated (selected).

Next, when the word line is made not to be activated (not to beselected), the X1 and the X2 are made to be the low level (VKK), and theX3 to be the high level (VDD) from the aforementioned state. A timingchart at this time is shown in FIG. 3. Since the NMOS transistor NM1 andthe NMOS transistor NM2 are then turned off while the PMOS transistorPM1 is turned on strongly as described above, the word line WL is notactivated (not selected).

In the aforementioned operations, the PMOS transistor PM1 functions as avariable resistor. Here, for example, an output of the preceding stagerow decoder of the inverter circuit (word line driving circuit) is ableto be changed by using a resistor or a normally-on PMOS transistor, asin the related art. This configuration is shown in FIG. 4 as oneexample. However, there is a problem that change of an output node isslow when a resistance value of the resistor or the PMOS transistor isfixed.

In this point, in the present embodiment, the PMOS transistor PM1 isstrongly turned on (a resistance value thereof is almost 0) at the timeof ON, and the value becomes high at the time of OFF. As a result ofthis, it becomes possible to operate the circuit at a high-speed, andthe operations thereof can be made reliable. In addition, a pass-throughcurrent flows through the PMOS transistor PM1, but it is only a smallamount, so that a problem of the pass-through current at the time ofstandby can be solved by making a word line driving operation to be apulse. Further, according to this configuration, it becomes unnecessaryto provide the level shift circuit for every word line that performslevel shift of the control signals.

Modified Embodiment 1

When examining the presence/absence of a leakage current of a memory,etc., memory cells may be multi-selected to make a test current flow fora time longer than usual. In such a case, a current that passes throughthe PMOS transistor PM1 increases. Consequently, as shown in FIG. 5, aPMOS transistor PM3 is provided between the power supply VPP and thefinal stage row decoder 200 as a switch ON/OFF controlled with a testsignal. Subsequently, the PMOS transistor PM3 is turned off at the timeof the test in which the memory cells are multi-selected. At this time,the NMOS transistors NM1 and NM2 are turned on, and the no1 becomes alow level. As a result of this, the pass-through current can beprevented from increasing.

Modified Embodiment 2

In the above-described first embodiment, the case is exemplified wherethe final stage row decoder 200 is the three-input logic, but as amatter of course, a two-input logic may also be used as shown in FIG. 6,and on the contrary, the circuit can be configured to decode moredecoder signals.

Second Embodiment

In the above-described first embodiment, the word line selection circuit100 is a modified AND logic circuit in which the node no2 is a highlevel when the address signals X1 and X2 are H (at the high level) andthe address signal X3 is L (at a low level). In contrast with this, in asecond embodiment, a word line is selected when the address signal X3 isat the high level, while it is not selected when the X3 is at the lowlevel similar to the case of the address signals X1 and X2. As a resultof this, types of the circuits and signal operations can be reduced,thus enabling to reduce the difficulty of designing and to improvedesign efficiency.

A configuration of the second embodiment is shown in FIG. 7. A word lineselection circuit 500 shown in FIG. 7 is provided with a final stage rowdecoder 600 and the word line driving driver 300. The word line drivingdriver 300 is the same as in the first embodiment. Here, an NMOStransistor NM4 is added in the final stage row decoder 600.

Specifically, the NMOS transistor NM4 is further connected in series tothe source of the NMOS transistor NM2 shown in FIG. 1. Subsequently, asource of this NMOS transistor NM4 is connected to the VKK. The addresssignal X3 is input into a gate of this NMOS transistor NM4. As a resultof this, a selection logic of the address signal X3 can be inverted.Hence, a word line is selected (activated) when the address signals X1,X2, and X3 are H (at the high level), while it is not selected (notactivated) when the address signals X1, X2, and X3 are L (at the lowlevel). According to this configuration, it becomes easier to design thecircuit since operations thereof become simple although the number ofelements increases.

Modified Embodiment 3

In the aforementioned embodiment, the case has been explained as anexample where the L potential is the VKK boosted to be negative in thepreceding stage row decoder 90. Here, means is required that makes alowest potential to be the VKK from the GND in order to make the Lpotential to be the VKK. However, in the course of increased lowering ofvoltage along with the miniaturization of transistors in the future,there has been a tendency to make a negative potential of the word lineWL shallow in order to prevent the increase of a leakage current from amemory cell transistor connected to the word line WL. If the VKK becomesshallow as described above, and then |VKK|<Vth (Vth is a thresholdvoltage of the NM3 or the NM4, for example) is established, the inputsignals (X1, X2, and X3) to the word line selection circuit 500 can bemade into signals that swing between the VDD and the GND of a usuallogic level. In this case, it becomes possible to constitute the rowdecoder 90 with a thin film transistor like a core power supply, thusenabling to achieve miniaturization and high speed of the elements, andpower reduction.

Here, when the GND is used as a negative power supply of the row decoder90, in the second embodiment, both cases are considered where the VKK isused and the GND is used as a negative power supply of the final stagerow decoder 600.

FIG. 8 shows the case where the VKK is used as the negative power supplyof the final stage row decoder 600 when the GND is used as the negativepower supply of the row decoder 90. In this case, when the addresssignals X1, X2, and X3 are at the low level (GND), there is apossibility that the NM4 is not completely turned off depending on adepth of |VKK|. Hence, an off leakage current that flows through the VKKis generated when the word line is not selected. If this off leakagecurrent is a tolerable level, a configuration shown in FIG. 8 can beused.

Meanwhile, FIG. 9 shows the case where the GND is used in place of thenegative power supply of the final stage row decoder 600 when the GND isused as the negative power supply of the row decoder 90. In this case,when the address signals X1, X2, and X3 are at the high level, there isa possibility that the NM3 is not completely turned off depending on thedepth of |VKK|. Hence, the off leakage current that flows through theVKK is generated when the word line is not selected. If fall of an Hpotential of the word line WL is a tolerance level, a configurationshown in FIG. 9 can be used. The configurations shown in FIGS. 8 and 9can be suitably selected in accordance with the optimization of thedesign of the circuit.

Third Embodiment

In the above-described first embodiment, the word line selection circuit100 has achieved final row decoding also including level conversion withsmall number of elements. Here, the configuration of the firstembodiment can further be applied to the preceding stage row decoder tothereby make a configuration of multi-stage decoders. FIG. 10 shows aconfiguration of a third embodiment, and a preceding stage row decoder700 is provided at a preceding stage to the word line selection circuit100. It is to be noted that in FIG. 10, the final stage row decoder 200and the word line driving driver 300 are the same as explained in thefirst embodiment.

As inputs of the final stage row decoder 200, there are included theaddress signals X1, X2, and X3. The preceding stage row decoder 700decodes nine address signals X11 to X33, and outputs the address signalsX1, X2, and X3. Hence, the preceding stage row decoder 700 is providedwith a decoder 710 for the X1, a decoder 720 for the X2, and a decoder730 for the X3.

Here, the word line selection circuit 100 is the modified AND logiccircuit in which the node no2 is a high level when the address signalsX1 and X2 are H (at the high level) and the address signal X3 is L (atthe low level). Hence, as configurations of the decoders for the X1 andthe X2, inverters 711 and 721 as driving buffers may be added to anoutput stage of the decoder 730 for the X3 to thereby invert thesignals. Consequently, a configuration of the decoder 730 for the X3 isshown in FIG. 10, while the configurations of the decoders for the X1and the X2 are omitted.

The address signal X3 is selected at the low level (VKK), while it isnot selected at the high level (VDD). Hence, as the configuration of thedecoder for the X3, the PMOS transistor and the NMOS transistor of theword line selection circuit 100 may be interchanged to each other,further, the highest potential VPP to the lowest potential VKK, and thelowest potential VKK to the highest potential VDD. The above-describedinterchange is specifically shown in FIG. 10. According to thisconfiguration, the preceding stage row decoder 700 can also be composedof small number of elements to thereby be made into a suitable one forhigh-speed operation since it does not require a level shifter. As aresult of this, the number of elements of a whole memory driver can alsobe reduced to thereby achieve high-speed operation.

Modified Embodiment 4

In the above-described third embodiment, the configuration in which theinverters 711 and 721 are added to the decoder 730 for the X3 is used asthe configurations of the decoder 710 for the X1 and the decoder 720 forthe X2. In contrast to this, as for a preceding stage row decoder 800,as shown in FIG. 11, the configuration of the word line selectioncircuit 100 may be employed as it is as configurations of a decoder 810for the X1 and a decoder 820 for the X2, and the configuration having aninverter 831 added thereto may be used as a configuration of a decoder830 for the X3.

The exemplary embodiments mentioned above can be combined as desirableby one of ordinary skill in the art.

While the invention has been described in terms of several exemplaryembodiments, those skilled in the art will recognize that the inventioncan be practiced with various modifications within the spirit and scopeof the appended claims and the invention is not limited to the examplesdescribed above.

Further, the scope of the claims is not limited by the exemplaryembodiments described above.

Furthermore, it is noted that, Applicants' intent is to encompassequivalents of all claim elements, even if amended later duringprosecution.

What is claimed is:
 1. A word line selection circuit comprising: a finalstage row decoder that receives first and second pre-decode signals,generates a decode signal, and has a control output node, first andsecond power supply nodes, and an inverter circuit that operates with afirst power supply voltage, drives a word line, and has an input nodeconnected to the control output node supplied with the decode signal,wherein the final stage row decoder comprises: a variable resistanceelement coupled between the first power supply node and the controloutput node, the first power supply node supplied with the first powersupply voltage, the variable resistance element responding to the firstpre-decode signal, first and second transistors coupled in seriesbetween the control output node and the second power supply node, thesecond power supply node supplied with a second power supply voltage,the first transistor having a gate terminal supplied with the firstpre-decode signal, the second transistor having a gate terminal suppliedwith the second pre-decode signal, wherein each of the first and secondpre-decode signals having a voltage range between the second powersupply voltage and a third power supply voltage, the third power supplyvoltage being less than the first power supply voltage.
 2. The word lineselection circuit according to claim 1, wherein the variable resistanceelement comprises a third transistor, the third transistor having a gateterminal supplied with the first pre-decode signal.
 3. The word lineselection circuit according to claim 2, wherein each of the first andsecond transistors has a first conductive type and the third transistorhas a second conductive type which is different from the firstconductive type.
 4. The word line selection circuit according to claim1, wherein the second power supply voltage is ground potential.
 5. Asemiconductor memory device comprising: a row decoder that generatesfirst and second pre-decode signals, the row decode being supplied witha first power supply voltage and a second power supply voltage, and; afinal stage row decoder that receives the first and second pre-decodesignals, generates a decode signal, and is supplied with a third powersupply voltage and a fourth power supply voltage, the third power supplyvoltage greater than the first power supply voltage, and an invertercircuit that drives a word line in response to the decode signal, and issupplied with the third power supply voltage and a fifth power supplyvoltage, wherein the final stage row decoder comprises: a first powersupply node supplied with the third power supply voltage; a second powersupply node supplied with the fourth power supply voltage; a controloutput node connected to a input of the inverter circuit; a variableresistance element coupled between the first power supply node and thecontrol output node, the variable resistance element responding to thefirst pre-decode signal, first and second transistors coupled in seriesbetween the control output node and the second power supply node, thefirst transistor having a gate terminal supplied with the firstpre-decode signal, the second transistor having a gate terminal suppliedwith the second pre-decode signal.
 6. The semiconductor memory deviceaccording to claim 5, wherein the second power supply voltage is equalto the fourth power supply voltage, and is different in level from thefifth power supply voltage, and the fifth power supply voltage is lessthan the second power supply voltage.
 7. The semiconductor memory deviceaccording to claim 5, wherein the second power supply voltage isdifferent in level from the fourth power supply voltage, the fourthpower supply voltage is equal to the fifth power supply voltage, andboth of the fourth power supply voltage and fifth power supply voltageare less than the second power supply voltage.
 8. The semiconductormemory device according to claim 6, wherein the second power supplyvoltage is ground potential.